Heat management is the main problem in the application of high brightness LED. Because the P-type doping of group III nitride is limited by the solubility of Mg accepter and the high start-up energy of hole, heat is especially easy to generate in the P-type region, and this heat must be dissipated on the heat sink through the whole structure. The heat dissipation of LED devices is mainly heat conduction and heat convection. The extremely low thermal conductivity of Sapphire substrate material leads to the increase of thermal resistance of the device, resulting in serious self-heating effect, which has a devastating impact on the performance and reliability of the device. The effect of heat on high brightness LED is that the heat is concentrated in the chip with small size, and the increase of chip temperature leads to the uneven distribution of thermal stress and the decrease of chip luminescence efficiency and fluorescent powder laser efficiency.

0.32 inch 3311AG LED Common-Cathode CC 3311AG 7-Segment digit 3311BG Display 3311BG Common-Anode CA
0.32 inch 3231AB LED Common-Cathode CC 3231AB 7-Segment digit 3231BB Display 3231BB Common-Anode CA

LED load voltage must be lower
LED brightness low-key with reduced voltage
Different LEDs with current and output curves
The working ratio change LED brightness
LED heat dissipation technology
LED lamp work is stable
Heat management with high brightness LED
Heat dissipation for highlight LED
LED device to extract heat from P-N junction
LED Lamp surface radiation heat treatment